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| LP750SOT89 LOW NOISE, HIGH LINEARITY PACKAGED PHEMT * FEATURES 26 dBm Output Power at 1-dB Compression at 1.8 GHz 17 dB Power Gain at 1.8 GHz 0.7 dB Noise Figure 40 dBm Output IP3 at 1.8 GHz 55% Power-Added Efficiency * DESCRIPTION AND APPLICATIONS The LP750SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 m x 750 m Schottky barrier gate, defined by electron-beam photolithography. The recessed "mushroom" gate structure minimizes parasitic gate-source and gate resistance. The epitaxial structure and processing have been optimized for reliable high-power applications. The LP750 also features Si3N4 passivation and is available in die form or in other packages. Typical applications include drivers or output stages in PCS/Cellular amplifiers, WLL and WLAN systems, and other types of wireless infrastructure systems. * ELECTRICAL SPECIFICATIONS @ TAmbient = 25C Parameter Saturated Drain-Source Current LP750SOT89-1 LP750SOT89-2 Power at 1-dB Compression Power Gain at 1-dB Compression Power-Added Efficiency Noise Figure Output Third-Order Intercept Point Maximum Drain-Source Current Transconductance Gate-Source Leakage Current Pinch-Off Voltage Gate-Source Breakdown Voltage Magnitude Gate-Drain Breakdown Voltage Magnitude frequency=1.8 GHz P-1dB G-1dB PAE NF IP3 IMAX GM IGSO VP |VBDGS| |VBDGD| VDS = 5 V; IDS = 50% IDSS VDS = 5 V; IDS = 50% IDSS VDS = 5 V; IDS = 50% IDSS; PIN = 10 dBm VDS = 5 V; IDS = 50% IDSS VDS = 5V; IDS = 50% IDSS; PIN = -7 dBm VDS = 2 V; VGS = 1 V VDS = 2 V; VGS = 0 V VGS = -5 V VDS = 2 V; IDS = 4 mA IGS = 4 mA IGD = 4 mA -0.25 -10 -10 170 Symbol IDSS Test Conditions VDS = 2 V; VGS = 0 V 180 231 24 15.5 26 17 55 0.7 40 450 220 5 -1.2 -12 -13 45 -2.0 230 265 mA mA dBm dB % dB dBm mA mS A V V V Min Typ Max Units Phone: (408) 988-1845 Fax: (408) 970-9950 http:// www.filss.com Revised: 1/18/02 Email: sales@filss.com LP750SOT89 LOW NOISE, HIGH LINEARITY PACKAGED PHEMT * ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain-Source Current Gate Current RF Input Power Channel Operating Temperature Storage Temperature Total Power Dissipation Notes: * * Symbol VDS VGS IDS IG PIN TCH TSTG PTOT Test Conditions TAmbient = 22 3 C TAmbient = 22 3 C TAmbient = 22 3 C TAmbient = 22 3 C TAmbient = 22 3 C TAmbient = 22 3 C -- TAmbient = 22 3 C -65 Min Max 7 -3 IDSS 7.5 175 175 175 1.75 Units V V mA mA mW C C W * * Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device. Power Dissipation defined as: PTOT (PDC + PIN) - POUT, where PDC: DC Bias Power PIN: RF Input Power POUT: RF Output Power Absolute Maximum Power Dissipation to be de-rated as follows above 25C: PTOT= 1.75W - (0.012W/C) x TPACK where TPACK = source tab lead temperature This PHEMT is susceptible to damage from Electrostatic Discharge. Proper precautions should be used when handling these devices. * OPTIMUM POWER OUTPUT MATCHING Load State Frequency (GHz) 1.8 2.2 2.5 Magnitude 0.39 0.37 0.43 Phase -168 -147 -135 * HANDLING PRECAUTIONS To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A (0-500 V). Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263. APPLICATIONS NOTES & DESIGN DATA Applications Notes are available from your local Filtronic Sales Representative or directly from the factory. Complete design data, including S-parameters, noise data, and large-signal models are available on the Filtronic web site. * Phone: (408) 988-1845 Fax: (408) 970-9950 http:// www.filss.com Revised: 1/18/02 Email: sales@filss.com LP750SOT89 LOW NOISE, HIGH LINEARITY PACKAGED PHEMT * PACKAGE OUTLINE (dimensions in inches) All information and specifications are subject to change without notice. Phone: (408) 988-1845 Fax: (408) 970-9950 http:// www.filss.com Revised: 1/18/02 Email: sales@filss.com |
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